? 2004 ixys all rights reserved 1 - 2 dgs 3-018as 0435 ixys reserve the right to change limits, conditions and dimensions. gallium arsenide schottky rectifier symbol conditions maximum ratings v rrm/rsm 180 v i fav t c = 25c; dc 7 a i fav t c = 90c; dc 5 a i fsm t vj = 45c; t p = 10 ms (50 hz); sine 10 a t vj -55...+175 c t stg -55...+150 c p tot t c = 25c 18 w i fav =7 a v rrm = 180 v c junction =8.8 pf symbol conditions characteristic values typ. max. i r v r = v rrm ;t vj = 25c 0.7 ma v r = v rrm ;t vj = 125c 0.7 ma v f i f = 2 a; t vj = 125c 0.85 v i f = 2 a; t vj = 25c 0.85 1.1 v c j v r = 100 v; t vj = 125c 8.8 pf r thjc 8.5 k/w weight 0.3 g pulse test: pulse width = 5 ms, duty cycle < 2.0% data according to din/iec 747 and per diode unless otherwise specified type marking on product circuit package dgs 3-018as 3a180as a = anode, c = cathode , tab = cathode a to-252 aa a c (tab) ac features low forward voltage very high switching speed low junction capacity of gaas - low reverse current peak at turn off soft turn off temperature independent switching behaviour high temperature operation capability epoxy meets ul 94v-0 applications mhz switched mode power supplies (smps) small size smps high frequency converters resonant converters
? 2004 ixys all rights reserved 2 - 2 dgs 3-018as 0435 ixys reserve the right to change limits, conditions and dimensions. to-252 aa dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1 anode 2 nc 3 anode 4 cathode 0,00,51,01,52,0 0,01 0,1 1 10 0,00001 0,0001 0,001 0,01 0,1 1 10 0,01 0,1 1 10 t s k/w 0,1 1 10 100 1000 10 100 c j i f a v f v r v pf v z thjc t vj = 125c 5 single pulse t vj = 125c 25c dgs 3-018as fig. 1typ. forward characteristics fig. 2 typ. junction capacity versus blocking voltage fig. 3 typ. thermal impedance junction to case note: explanatory comparison of the basic operational behaviour of rectifier diodes and gallium arsenide schottky diodes: conduction forward characteristics turn off characteristics turn on characteristics by majority + minority carriers v f (i f ) extraction of excess carriers causes temperature dependant reverse recovery (t rr , i rm , q rr ) delayed saturation leads to v fr rectifier diode by majority carriers only v f (i f ), see fig. 1 reverse current charges junction capacity c j , see fig. 2; not temperature dependant no turn on overvoltage peak gaas schottky diode
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